LESR
Closed Loop Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 3 to14 ppm/°C, -40°C to + 105°C, Reference access, Primary integrated conductors , 100 % fully compatible with CASR xx-NP series
LESR 25-NP
25 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 4 ppm/°C, -40°C to + 105°C, Reference access, Primary integrated conductors , 100 % fully compatible with CASR 25-NP
- 系列
-
LESR
- 测量类型
-
电流
- 额定值
-
25 A
- 测量范围
-
85 A
- 副边输出信号
-
电压
- 副边输出信号值
- 瞬时 2.5 +/- 0.625 V
- 原边信号
-
AC + DC
- 工作电压
-
外部供电 DC 单向
- 精度
- 0.5 %
- 工作温度
- -40 °C / 105 °C
- 技术
-
闭环霍尔效应
- 安装
-
PCB
- 应用
-
驱动电源可再生能源焊接
同系列产品
LESR 15-NP/SP1
15 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 6 ppm/°C, -40°C to + 105°C, Reference access, Only 2 integrated primary conductors for differential measurement with 1 turn
LESR 25-NP/SP1
25 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 4 ppm/°C, -40°C to + 105°C, Reference access, Only 4 integrated primary conductors for differential measurement with 2 x 2 turns
LESR 50-NP/SP1
50 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 3 ppm/°C, -40°C to + 105°C, Reference access, Only 4 integrated primary conductors for differential measurement with 2 x 2 turns
LESR 6-NP/SP1
6 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 14 ppm/°C, -40°C to + 105°C, Reference access, Only 2 integrated primary conductors for differential measurement with 1 turn
LESR 15-NP
15 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 6 ppm/°C, -40°C to + 105°C, Reference access, Primary integrated conductors , 100 % fully compatible with CASR 15-NP
LESR 6-NP
6 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 14 ppm/°C, -40°C to + 105°C, Reference access, Primary integrated conductors , 100 % fully compatible with CASR 6-NP
LESR 50-NP
50 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 3 ppm/°C, -40°C to + 105°C, Reference access, Primary integrated conductors , 100 % fully compatible with CASR 50-NP