LESR

Closed Loop Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 3 to14 ppm/°C, -40°C to + 105°C,  Reference access, Primary integrated conductors , 100 % fully compatible with CASR xx-NP series

型号细节

LESR 25-NP/SP1

25 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 4 ppm/°C, -40°C to + 105°C,  Reference access, Only 4 integrated primary conductors for differential measurement with 2 x 2 turns

系列
LESR
测量类型
电流
额定值
25 A
测量范围
85 A
副边输出信号
电压
副边输出信号值
瞬时 2.5 +/- 0.625 V
原边信号
AC + DC
工作电压
外部供电 DC 单向
精度
0.7 %
工作温度
-40 °C / 105 °C
技术
闭环霍尔效应
安装
PCB
应用
驱动
电源
可再生能源
焊接
PICTURE
FRONT
BACK
LEFT
RIGHT
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同系列产品

LESR 15-NP/SP1

15 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 6 ppm/°C, -40°C to + 105°C,  Reference access, Only 2 integrated primary conductors for differential measurement with 1 turn

LESR 50-NP/SP1

50 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 3 ppm/°C, -40°C to + 105°C,  Reference access, Only 4 integrated primary conductors for differential measurement with 2 x 2 turns

LESR 6-NP/SP1

6 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 14 ppm/°C, -40°C to + 105°C,  Reference access, Only 2 integrated primary conductors for differential measurement with 1 turn

LESR 15-NP

15 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 6 ppm/°C, -40°C to + 105°C,  Reference access, Primary integrated conductors , 100 % fully compatible with CASR 15-NP

LESR 25-NP

25 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 4 ppm/°C, -40°C to + 105°C,  Reference access, Primary integrated conductors , 100 % fully compatible with CASR 25-NP

LESR 6-NP

6 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 14 ppm/°C, -40°C to + 105°C,  Reference access, Primary integrated conductors , 100 % fully compatible with CASR 6-NP

LESR 50-NP

50 A nominal, C/L Hall effect Performing at the level of Fluxgate technology without the added cost, Low offset drift 3 ppm/°C, -40°C to + 105°C,  Reference access, Primary integrated conductors , 100 % fully compatible with CASR 50-NP